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Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

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Title Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
 
Creator RAMGOPAL RAO, V
SHARMA, DK
VASI, J
 
Subject mos capacitors
dielectric thin films
electron traps
nitridation
oxidation
radiation effects
 
Description In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to ±2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.
 
Publisher IEEE
 
Date 2008-11-25T10:55:29Z
2011-11-25T15:14:05Z
2011-12-26T13:04:33Z
2011-12-27T05:50:26Z
2008-11-25T10:55:29Z
2011-11-25T15:14:05Z
2011-12-26T13:04:33Z
2011-12-27T05:50:26Z
1996
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 43(9), 1467-70
0018-9383
http://dx.doi.org/10.1109/16.535335
http://hdl.handle.net/10054/145
http://dspace.library.iitb.ac.in/xmlui/handle/10054/145
 
Language en_US