Record Details

High-field stressing of LPCVD gate oxides

DSpace at IIT Bombay

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Title High-field stressing of LPCVD gate oxides
 
Creator RAMGOPAL RAO, V
EISELE, I
PATRIKAR, RM
SHARMA, DK
GRABOLLA, T
VASI, J
 
Subject dielectric thin films
electron traps
high field effects
hot carriers
interface states
semiconductor-insulator boundaries
 
Description We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.
 
Publisher IEEE
 
Date 2008-11-25T10:55:47Z
2011-11-25T15:30:39Z
2011-12-26T13:04:47Z
2011-12-27T05:50:46Z
2008-11-25T10:55:47Z
2011-11-25T15:30:39Z
2011-12-26T13:04:47Z
2011-12-27T05:50:46Z
1997
 
Type Article
 
Identifier IEEE Electron Device Letters 18(3), 84-86
0741-3106
http://dx.doi.org/10.1109/55.556088
http://hdl.handle.net/10054/146
http://dspace.library.iitb.ac.in/xmlui/handle/10054/146
 
Language en_US