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Power-area evaluation of various double-gate RF mixer topologies

DSpace at IIT Bombay

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Title Power-area evaluation of various double-gate RF mixer topologies
 
Creator PATIL, MB
REDDY, MVR
SHARMA, DK
RAMGOPAL RAO, V
 
Subject electric network topology
field effect transistors
gates (transistor)
mixer circuits
power electronics
semiconductor device models
 
Description In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies.
 
Publisher IEEE
 
Date 2008-11-24T05:36:41Z
2011-11-25T15:25:08Z
2011-12-26T13:04:52Z
2011-12-27T05:50:54Z
2008-11-24T05:36:41Z
2011-11-25T15:25:08Z
2011-12-26T13:04:52Z
2011-12-27T05:50:54Z
2005
 
Type Article
 
Identifier IEEE Electron Device Letters 26(9), 664-66
0741-3106
http://dx.doi.org/10.1109/LED.2005.853632
http://hdl.handle.net/10054/122
http://dspace.library.iitb.ac.in/xmlui/handle/10054/122
 
Language en_US