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Silicon film thickness considerations in SOI-DTMOS

DSpace at IIT Bombay

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Field Value
 
Title Silicon film thickness considerations in SOI-DTMOS
 
Creator DESAI, MP
SIVARAM, P
ANAND, B
 
Subject mosfet
semiconductor device models
semiconductor thin films
silicon-on-insulator
 
Description We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phenomenon using two-dimensional (2-D) device simulations and conclude that a film thickness greater than 100 nm is required. This sets a criterion for SOI devices to be used as dynamic threshold MOSFETs.
 
Publisher IEEE
 
Date 2008-11-21T06:56:02Z
2011-11-25T12:36:46Z
2011-12-26T13:05:06Z
2011-12-27T05:51:06Z
2008-11-21T06:56:02Z
2011-11-25T12:36:46Z
2011-12-26T13:05:06Z
2011-12-27T05:51:06Z
2002
 
Type Article
 
Identifier IEEE Electron Device Letters 23 (5), 276-8
0741-3106
http://dx.doi.org/10.1109/55.998875
http://hdl.handle.net/10054/81
http://dspace.library.iitb.ac.in/xmlui/handle/10054/81
 
Language en_US