Effect of H2 dilution on Cat-CVD a-SiC:H films
DSpace at IIT Bombay
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Title |
Effect of H2 dilution on Cat-CVD a-SiC:H films
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Creator |
SWAIN, BIBHU P
GUNDU RAO, TK ROY, MAINAK GUPTA, JAGANNATH DUSANE, RO |
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Subject |
amorphous material
fourier transform infrared spectroscopy graphite raman spectra |
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Description |
Effect of hydrogen (H2) dilution of the Silane (SiH4), acetylene (C2H2) gas mixture during the deposition of hydrogenated amorphous silicon carbon alloy (a-SiC:H) films by Cat-CVD process shows that the H2 dilution induced additional carbon incorporation, leading to an increase of the carbon content in the films from 52% to 70% for the maximum H2 dilution employed. A slight increase in graphitic carbon in the films deposited with H2 dilution is also observed. A drastic increase in the optical band gap Eg from 2.5 eV for zero dilution to 3.5 eV is observed for a H2 dilution of 10 sccm. Raman spectra for the films deposited with increasing H2 dilution indicate structural changes in the amorphous network associated with increasing graphitic carbon.
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Publisher |
Elsevier
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Date |
2009-06-30T07:03:15Z
2011-11-25T15:03:32Z 2011-12-26T13:05:06Z 2011-12-27T05:51:12Z 2009-06-30T07:03:15Z 2011-11-25T15:03:32Z 2011-12-26T13:05:06Z 2011-12-27T05:51:12Z 2006 |
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Type |
Article
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Identifier |
Thin Solid Films 501(1-2), 173-176
0040-6090 http://dx.doi.org/10.1016/j.tsf.2005.07.183 http://hdl.handle.net/10054/1581 http://dspace.library.iitb.ac.in/xmlui/handle/10054/1581 |
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Language |
es
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