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High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing

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Title High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing
 
Creator SUBRAHMANYAM, PVS
PRABHAKAR, A
VASI, J
 
Subject rapid thermal processing
dielectric thin films
high field effects
electron traps
 
Description Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric.
 
Publisher IEEE
 
Date 2008-11-24T05:39:01Z
2011-11-25T16:00:15Z
2011-12-26T13:05:11Z
2011-12-27T05:51:22Z
2008-11-24T05:39:01Z
2011-11-25T16:00:15Z
2011-12-26T13:05:11Z
2011-12-27T05:51:22Z
1997
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 44(3), 505-08
0018-9383
http://dx.doi.org/10.1109/16.556163
http://hdl.handle.net/10054/128
http://dspace.library.iitb.ac.in/xmlui/handle/10054/128
 
Language en_US