High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing
DSpace at IIT Bombay
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Title |
High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing
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Creator |
SUBRAHMANYAM, PVS
PRABHAKAR, A VASI, J |
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Subject |
rapid thermal processing
dielectric thin films high field effects electron traps |
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Description |
Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric.
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Publisher |
IEEE
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Date |
2008-11-24T05:39:01Z
2011-11-25T16:00:15Z 2011-12-26T13:05:11Z 2011-12-27T05:51:22Z 2008-11-24T05:39:01Z 2011-11-25T16:00:15Z 2011-12-26T13:05:11Z 2011-12-27T05:51:22Z 1997 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 44(3), 505-08
0018-9383 http://dx.doi.org/10.1109/16.556163 http://hdl.handle.net/10054/128 http://dspace.library.iitb.ac.in/xmlui/handle/10054/128 |
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Language |
en_US
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