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Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance

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Title Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance
 
Creator SHARMA, DK
NARASIMHULU, K
RAMGOPAL RAO, V
 
Subject transistors
optimization
electric inverters
integrated circuits
 
Description In this paper, we have systematically investigated the effect of scaling on analog performance parameters in lateral asymmetric channel (LAC) MOSFETs and compared their performance with conventional (CON) MOSFETs for mixed-signal applications. Our results show that, in LAC MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID etc.) down to the 70-nm technology node, in addition to an improvement in drive current and other parameters over a wide range of channel lengths. A systematic comparison on the performance of amplifiers and CMOS inverters with CON and LAC MOSFETs is also performed. The tradeoff between power dissipation and device performance is explored with detailed circuit simulations for both CON and LAC MOSFETs.
 
Publisher IEEE
 
Date 2008-11-25T12:06:01Z
2011-11-25T16:00:45Z
2011-12-26T13:05:11Z
2011-12-27T05:51:23Z
2008-11-25T12:06:01Z
2011-11-25T16:00:45Z
2011-12-26T13:05:11Z
2011-12-27T05:51:23Z
2003
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 50(12), 2481-89
0018-9383
http://dx.doi.org/10.1109/TED.2003.820120
http://hdl.handle.net/10054/149
http://dspace.library.iitb.ac.in/xmlui/handle/10054/149
 
Language en_US