Record Details

Solution-processed n-type organic field-effect transistors with high ON/ OFF current ratios based on fullerene derivatives

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Solution-processed n-type organic field-effect transistors with high ON/ OFF current ratios based on fullerene derivatives
 
Creator TIWARI, SP
NAMDAS, EB
RAMGOPAL RAO, V
 
Subject field effect transistors
activation energy
electron mobility
electrons
fullerenes
semiconducting organic compounds
 
Description Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2-thienylethoxycarbonyl)-propyl)-{5}-1-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/ drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 × 10-2cm2/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The on/off ratios reported in this letter, which are in the range of 105 - 106, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP
 
Publisher IEEE
 
Date 2008-12-01T09:53:20Z
2011-11-25T16:18:48Z
2011-12-26T13:05:12Z
2011-12-27T05:51:28Z
2008-12-01T09:53:20Z
2011-11-25T16:18:48Z
2011-12-26T13:05:12Z
2011-12-27T05:51:28Z
2007
 
Type Article
 
Identifier IEEE Electron Device Letters 28 (10), 880-83
0741-3106
http://dx.doi.org/10.1109/LED.2007.905960
http://hdl.handle.net/10054/221
http://dspace.library.iitb.ac.in/xmlui/handle/10054/221
 
Language en_US