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Modeling of the CoolMOSTM transistor - Part I: device physics

DSpace at IIT Bombay

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Title Modeling of the CoolMOSTM transistor - Part I: device physics
 
Creator PATIL, MB
DANIEL, BJ
PARIKH, CD
 
Subject power mosfet
semiconductor device models
 
Description CoolMOSTM is a novel power MOSFET with a "superjunction" for its drift region, which results in a vastly improved relationship between the on resistance and breakdown voltage. The presence of the superjunction makes the device physics very interesting and complicated. In this paper, we present simulation results aimed at understanding the device operation both in the on state and in the off state. Quasi saturation of the drain current is analyzed, and it is shown that it can be prevented by increasing the doping density of the drift region. An analytic model of the JFET-like drift region is presented. A CoolMOSTM transistor model based on the simulation results described here will be presented in an accompanying paper.
 
Publisher IEEE
 
Date 2008-11-25T05:57:00Z
2011-11-25T12:35:16Z
2011-12-26T13:05:15Z
2011-12-27T05:51:32Z
2008-11-25T05:57:00Z
2011-11-25T12:35:16Z
2011-12-26T13:05:15Z
2011-12-27T05:51:32Z
2002
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 49(5), 916-22
0018-9383
http://dx.doi.org/10.1109/16.998603
http://hdl.handle.net/10054/137
http://dspace.library.iitb.ac.in/xmlui/handle/10054/137
 
Language en_US