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Net positive-charge buildup in various MOS insulators due to high-field stressing

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Title Net positive-charge buildup in various MOS insulators due to high-field stressing
 
Creator VASI, J
PATRIKAR, RM
LAL, RAKESH
 
Subject annealing
high field effects
insulating thin films
metal-insulator-semiconductor devices
 
Description The buildup of net positive charge with field stressing has been observed in all thermally grown oxides, viz. dry, pyrogenic, reoxidized nitrided oxides (RNO), and reoxidized nitrided pyrogenic oxides (RNPO). The authors observed a faster rate of growth of net positive charge for dry oxides given a postmetalization anneal (PMA) in hydrogen than for those given a PMA in nitrogen; the fastest growth of net positive charge, however, was observed in pyrogenic oxides. It has been observed that in dry and pyrogenic oxides the positive-charge growth as a function of time obeys a power law with time under the stress of constant current or voltage. On the other hand, growth of positive charge in RNO and RNPO shows a two-piece linear growth of positive charge. These results suggest that positive-charge growth at high fields is related to both the hydrogen concentration and its drift in the oxide
 
Publisher IEEE
 
Date 2008-11-26T11:19:41Z
2011-11-25T16:06:46Z
2011-12-26T13:05:17Z
2011-12-27T05:51:39Z
2008-11-26T11:19:41Z
2011-11-25T16:06:46Z
2011-12-26T13:05:17Z
2011-12-27T05:51:39Z
1993
 
Type Article
 
Identifier IEEE Electron Device Letters 14(11), 530-32
0741-3106
http://dx.doi.org/10.1109/55.258005
http://hdl.handle.net/10054/188
http://dspace.library.iitb.ac.in/xmlui/handle/10054/188
 
Language en_US