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Stress voltage polarity dependence of JVD-Si3N4 MNSFET degradation

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Title Stress voltage polarity dependence of JVD-Si3N4 MNSFET degradation
 
Creator VASI, J
MANJULA RANI, KN
RAMGOPAL RAO, V
 
Subject mosfet
dielectric thin films
leakage currents
reliability
silicon alloys
silicon-on-insulator
 
Description In this paper, we study the stress voltage polarity-dependent reliability of n-channel metal-nitride-silicon field-effect transistors (MNSFETs) with ultrathin jet vapor deposited (JVD) silicon nitride dielectric. Under constant voltage stress, device parameters such as threshold voltage and transconductance degrade. Charge trapping due to interface and bulk traps is observed. Our study shows that the degradation is polarity dependent. MNSFETs show lower degradation under positive stress fields. We have also compared the performance of MNSFETs with conventional MOSFETs under identical stress conditions. Under positive stressing, MNSFETs clearly outperform MOSFETs, but under negative stressing, MNSFETs show more degradation.
 
Publisher IEEE
 
Date 2008-11-26T09:47:38Z
2011-11-25T16:04:46Z
2011-12-26T13:05:19Z
2011-12-27T05:51:46Z
2008-11-26T09:47:38Z
2011-11-25T16:04:46Z
2011-12-26T13:05:19Z
2011-12-27T05:51:46Z
2004
 
Type Article
 
Identifier IEEE Transactions on Device and Materials Reliability 4(1), 18-23
1530-4388
http://dx.doi.org/10.1109/TDMR.2004.824366
http://hdl.handle.net/10054/186
http://dspace.library.iitb.ac.in/xmlui/handle/10054/186
 
Language en_US