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Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect

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Field Value
 
Title Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect
 
Creator DATTA, A
BHARATH KUMAR, P
MAHAPATRA, S
 
Subject cellular arrays
nonvolatile storage
optimization
semiconductor storage
 
Description Programming performance of dual-bit silicon-oxide-nitride-oxide-silicon memories is studied on cells fabricated using different channel engineering schemes. Both halo and compensation implants are shown to impact the programming speed, bit coupling, and read disturb, and can be suitably adjusted to optimize the cell operation. The doping dependence of bit coupling and the programming speed are verified using well-calibrated 2-D device simulations.
 
Publisher IEEE
 
Date 2008-12-01T04:56:28Z
2011-11-25T16:12:17Z
2011-12-26T13:05:20Z
2011-12-27T05:51:48Z
2008-12-01T04:56:28Z
2011-11-25T16:12:17Z
2011-12-26T13:05:20Z
2011-12-27T05:51:48Z
2007
 
Type Article
 
Identifier IEEE Electron Device Letters 28(7), 446-48
0741-3106
http://dx.doi.org/10.1109/LED.2007.895406
http://hdl.handle.net/10054/208
http://dspace.library.iitb.ac.in/xmlui/handle/10054/208
 
Language en_US