Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect
DSpace at IIT Bombay
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Title |
Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect
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Creator |
DATTA, A
BHARATH KUMAR, P MAHAPATRA, S |
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Subject |
cellular arrays
nonvolatile storage optimization semiconductor storage |
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Description |
Programming performance of dual-bit silicon-oxide-nitride-oxide-silicon memories is studied on cells fabricated using different channel engineering schemes. Both halo and compensation implants are shown to impact the programming speed, bit coupling, and read disturb, and can be suitably adjusted to optimize the cell operation. The doping dependence of bit coupling and the programming speed are verified using well-calibrated 2-D device simulations.
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Publisher |
IEEE
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Date |
2008-12-01T04:56:28Z
2011-11-25T16:12:17Z 2011-12-26T13:05:20Z 2011-12-27T05:51:48Z 2008-12-01T04:56:28Z 2011-11-25T16:12:17Z 2011-12-26T13:05:20Z 2011-12-27T05:51:48Z 2007 |
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Type |
Article
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Identifier |
IEEE Electron Device Letters 28(7), 446-48
0741-3106 http://dx.doi.org/10.1109/LED.2007.895406 http://hdl.handle.net/10054/208 http://dspace.library.iitb.ac.in/xmlui/handle/10054/208 |
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Language |
en_US
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