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Multiferroic Bi(0.7)Dy(0.3)FeO(3) thin films directly integrated on Si for integrated circuit compatible devices

DSpace at IIT Bombay

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Title Multiferroic Bi(0.7)Dy(0.3)FeO(3) thin films directly integrated on Si for integrated circuit compatible devices
 
Creator PRASHANTHI, K
CHALKE, BA
BAPAT, RD
PURANDARE, SC
PALKAR, VR
 
Subject bifeo3
polarization
la
thin films
multiferroics
pulse laser deposition
magnetic properties
ferroelectric properties
 
Description Magnetoelectric multiferroic Bi(0.7)Dy(0.3)FeO(3) (BDFO) thin films deposited on p-type Si (100) substrate using pulsed laser deposition technique demonstrated a saturated ferroelectric and ferromagnetic hysteresis loop at room temperature. More interestingly, the observed change in electric polarization with applied magnetic field in these films indicated the presence of room temperature magnetoelectric coupling behavior. Using high-frequency capacitance-voltage measurements, the fixed oxide charge density, interface trap density and dielectric constant were estimated on Au/BDFO/Si capacitors. These results suggest the integrated circuit compatible application potential of BDFO films in the field of micro-electro-mechanical systems and nonvolatile memories. .
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-28T13:50:35Z
2011-12-26T12:59:33Z
2011-12-27T05:51:54Z
2011-07-28T13:50:35Z
2011-12-26T12:59:33Z
2011-12-27T05:51:54Z
2010
 
Type Article
 
Identifier THIN SOLID FILMS, 518(20), 5866-5870
0040-6090
http://dx.doi.org/10.1016/j.tsf.2010.05.060
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7417
http://hdl.handle.net/10054/7417
 
Language en