Record Details

Metal nanocrystal memory with pt single- and dual-layer NC With low-Leakage AI2O3 Blocking Dielectric

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Metal nanocrystal memory with pt single- and dual-layer NC With low-Leakage AI2O3 Blocking Dielectric
 
Creator SINGH, PK
BISHT, G
HOFMANN, R
SINGH, K
KRISHNA, N
MAHAPATRA, S
 
Subject cmos integrated circuit
aluminium compound
flash memories
nanostructured materials
 
Description In this letter, we report metal nanocrystal (NC)-based flash memory devices with single-layer (SL) and dual-layer (DL) Pt NCs as the storage element. The devices are fabricated using CMOS compatible process flow with optimized low-leakage high-k Al2O3 as the control dielectric. Large memory window (10 V for SL and 15 V for DL devices) is observed due to overerase, which increases the overall window. Improvement in DL memory window is found to be due to 1.5 times improvement in total stored charge over SL. Excellent high-temperature precycling retention is observed both for SL and DL devices.
 
Publisher IEEE
 
Date 2009-02-18T05:30:34Z
2011-11-25T17:10:26Z
2011-12-26T13:06:00Z
2011-12-27T05:51:59Z
2009-02-18T05:30:34Z
2011-11-25T17:10:26Z
2011-12-26T13:06:00Z
2011-12-27T05:51:59Z
2008
 
Type Article
 
Identifier IEEE Electron Device Letters 29 (12), 1389-1391
0741-3106
http://dx.doi.org/10.1109/LED.2008.2007308
http://hdl.handle.net/10054/690
http://dspace.library.iitb.ac.in/xmlui/handle/10054/690
 
Language en