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Multiphase structure of hydrogen diluted a-SiC : H deposited by HWCVD

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Title Multiphase structure of hydrogen diluted a-SiC : H deposited by HWCVD
 
Creator SWAIN, BP
DUSANE, RO
 
Subject silicon-carbon alloys
chemical-vapor-deposition
amorphous-carbon
infrared-absorption
photo-luminescence
glow-discharge
carbide films
solar-cells
disorder
sixc1-x
hwcvd
a-sic : h
multiphase
microstructure
photoluminescence
 
Description The structural and optical properties of hydrogenated amorphous silicon carbon (a-SiC:H) thin films, grown from pure SiH4, C2H2 and H-2 mixture by hot wire chemical vapor deposition (HWCVD) technique, were studied. Variable flow rates and other growth conditions were applied. A variety of techniques, including X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy, Raman scattering (RS), Atomic force microscopy (AFM), UV-VIS-NIR spectroscopy and photoluminescence (PL) were used to characterize the grown materials. The results confirmed coexisting of the multiphase structure of the grown a-SiC:H thin films: Si-C network, carbon-like and silicon-like clusters. The room temperature (RT) PL shows a different result from the previous reports. It is suggested that both graphite-cluster phase and silicon cluster like phase are light-emitting grains. The two types of grains and Si-C network are the origin of the PL in hydrogenated amorphous silicon carbide material. (c) 2005
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-07-28T13:53:24Z
2011-12-26T12:59:34Z
2011-12-27T05:52:01Z
2011-07-28T13:53:24Z
2011-12-26T12:59:34Z
2011-12-27T05:52:01Z
2006
 
Type Article
 
Identifier MATERIALS CHEMISTRY AND PHYSICS, 99(2-3), 240-246
0254-0584
http://dx.doi.org/10.1016/j.matchemphys.2005.10.018
http://dspace.library.iitb.ac.in/xmlui/handle/10054/7418
http://hdl.handle.net/10054/7418
 
Language en