Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique
DSpace at IIT Bombay
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Title |
Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique
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Creator |
RAMGOPAL RAO, V
NAJEEB-UD-DIN HAKIM DUNGA, MV AATISH KUMAR VASI, J CHENG, B WOO, JCS |
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Subject |
mosfet
semiconductor device models semiconductor process modelling silicon-on-insulator |
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Description |
Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs.
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Publisher |
IEEE
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Date |
2008-11-26T11:24:59Z
2011-11-25T16:08:46Z 2011-12-26T13:05:22Z 2011-12-27T05:52:08Z 2008-11-26T11:24:59Z 2011-11-25T16:08:46Z 2011-12-26T13:05:22Z 2011-12-27T05:52:08Z 2002 |
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Type |
Article
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Identifier |
Electron Device Letters 23(4), 209-11
0741-3106 http://dx.doi.org/10.1109/55.992841 http://hdl.handle.net/10054/190 http://dspace.library.iitb.ac.in/xmlui/handle/10054/190 |
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Language |
en_US
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