ICAR Research Data Repository for Knowledge Management
Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films
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| Creator |
KUMAR, M
SHARAN, MK SHARON, M |
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| Subject |
solar-cells
cdse electroless thin films semiconductors chalcogenides |
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| Description |
Photosensitive thin films of binary and ternary phase semiconductors have been deposited on metallic substrates by non-catalytic displacement plating (NCDP). Various preparative parameters are optimized for deposition of CdSe, CdTe and ZnCdSe on Zn and Ti substrates. Bandgap of Zn(1-x)CdxSe has been tailored from 1.68 to 2.53 eV for various Zn/Cd molar ratios: Photoelectrodes thus prepared are found to yield a short circuit current up to 2 mu A and an open circuit voltage up to 0.45 V in S2-/S-2(2-) electrolyte. (C) 1998 Elsevier Science S.A.
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| Publisher |
ELSEVIER SCIENCE SA
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| Date |
2011-07-28T14:21:30Z
2011-12-26T12:59:40Z 2011-12-27T05:52:17Z 2011-07-28T14:21:30Z 2011-12-26T12:59:40Z 2011-12-27T05:52:17Z 1998 |
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| Type |
Article
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| Identifier |
THIN SOLID FILMS, 312(1-2), 139-146
0040-6090 http://dx.doi.org/10.1016/S0040-6090(97)00734-7 http://dspace.library.iitb.ac.in/xmlui/handle/10054/7424 http://hdl.handle.net/10054/7424 |
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| Language |
en
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