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Defect generation in p-MOSFETs under negative-bias stress: an experimental perspective

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Title Defect generation in p-MOSFETs under negative-bias stress: an experimental perspective
 
Creator MAHAPATRA, S
ALAM, MA
 
Subject electric charge
mathematical models
parameter estimation
temperature measurement
 
Description In this paper, a focused review is made of our previously reported (2002-2007) work on negative-bias temperature-instability (NBTI) measurement and analysis. Using suitable cross-reference to other published work, the impacts of stress condition, characterization technique, and gate-oxide process on measured NBTI parameters are reviewed. The large scatter of measured time, bias, and temperature dependencies of NBTI, which are observed in published literature, is carefully analyzed. A common framework for NBTI physical mechanism is suggested and discussed. Issues lacking proper understanding at present are also highlighted.
 
Publisher IEEE
 
Date 2009-01-11T06:39:45Z
2011-11-25T16:26:49Z
2011-12-26T13:05:28Z
2011-12-27T05:52:28Z
2009-01-11T06:39:45Z
2011-11-25T16:26:49Z
2011-12-26T13:05:28Z
2011-12-27T05:52:28Z
2008
 
Type Article
 
Identifier IEEE Transactions on Device and Materials Reliability 8(1), 35-46
1530-4388
http://dx.doi.org/10.1109/TDMR.2007.912261
http://hdl.handle.net/10054/550
http://dspace.library.iitb.ac.in/xmlui/handle/10054/550
 
Language en