Gallium arsenide photo-MESFET's
DSpace at IIT Bombay
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Title |
Gallium arsenide photo-MESFET's
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Creator |
LAKSHMI, B
CHALAPATI, K SRIVASTAVA, AK ARORA, BM SUBRAMANIAN, S SHARMA, DK |
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Subject |
iii-v semiconductors
schottky gate field effect transistors gallium arsenide phototransistors |
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Description |
Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subthreshold mode with subband-gap photon energy illumination. In the second mode, the transistor operates by internal photoemission from the metal gate to the semiconductor. In the normal mode, the square root of the drain photocurrent varies as the logarithm of the incident light intensity. The device characteristics for subband-gap illumination have been analyzed, and it is shown that the photocurrent varies linearly with light intensity in this mode.
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Publisher |
IEEE
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Date |
2009-01-29T12:11:53Z
2011-11-25T16:34:50Z 2011-12-26T13:05:28Z 2011-12-27T05:52:30Z 2009-01-29T12:11:53Z 2011-11-25T16:34:50Z 2011-12-26T13:05:28Z 2011-12-27T05:52:30Z 1990 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 37 (6 part 1), 1533-1535
0018-9383 http://dx.doi.org/10.1109/16.106251 http://hdl.handle.net/10054/597 http://dspace.library.iitb.ac.in/xmlui/handle/10054/597 |
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Language |
en
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