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Gallium arsenide photo-MESFET's

DSpace at IIT Bombay

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Title Gallium arsenide photo-MESFET's
 
Creator LAKSHMI, B
CHALAPATI, K
SRIVASTAVA, AK
ARORA, BM
SUBRAMANIAN, S
SHARMA, DK
 
Subject iii-v semiconductors
schottky gate field effect transistors
gallium arsenide
phototransistors
 
Description Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subthreshold mode with subband-gap photon energy illumination. In the second mode, the transistor operates by internal photoemission from the metal gate to the semiconductor. In the normal mode, the square root of the drain photocurrent varies as the logarithm of the incident light intensity. The device characteristics for subband-gap illumination have been analyzed, and it is shown that the photocurrent varies linearly with light intensity in this mode.
 
Publisher IEEE
 
Date 2009-01-29T12:11:53Z
2011-11-25T16:34:50Z
2011-12-26T13:05:28Z
2011-12-27T05:52:30Z
2009-01-29T12:11:53Z
2011-11-25T16:34:50Z
2011-12-26T13:05:28Z
2011-12-27T05:52:30Z
1990
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 37 (6 part 1), 1533-1535
0018-9383
http://dx.doi.org/10.1109/16.106251
http://hdl.handle.net/10054/597
http://dspace.library.iitb.ac.in/xmlui/handle/10054/597
 
Language en