Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation
DSpace at IIT Bombay
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Title |
Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation
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Creator |
MAHAPATRA, S
NAIR, DR SHUKURI, S BUDE, JD |
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Subject |
computer simulation
electron tunneling flash memory monte carlo methods |
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Description |
The impact of program/erase (P/E) cycling on drain disturb in NOR Flash EEPROM cells under channel hot electron (CHE) and channel-initiated secondary electron (CHISEL) programming operation is studied. Charge gain disturb increases and charge loss disturb decreases after cycling under CHE and CHISEL operation. Carefully designed experiments and fullband Monte Carlo simulations were used to explain this behavior. P/E cycling induced degradation in gate coupling coefficient and the resulting increase in source/drain leakage, reduction in band-to-band tunneling and change in carrier injection area seems to explain well the behavior of CHE and CHISEL drain disturb after cycling.
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Publisher |
IEEE
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Date |
2008-11-24T05:23:39Z
2011-11-25T12:23:14Z 2011-12-26T13:05:44Z 2011-12-27T05:53:00Z 2008-11-24T05:23:39Z 2011-11-25T12:23:14Z 2011-12-26T13:05:44Z 2011-12-27T05:53:00Z 2005 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 54(4), 534-40
http://hdl.handle.net/10054/99 http://dspace.library.iitb.ac.in/xmlui/handle/10054/99 |
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Language |
en_US
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