Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs
DSpace at IIT Bombay
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Title |
Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs
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Creator |
MAHETA, VD
NARESH KUMAR, E PURAWAT, S OLSEN, C AHMED, K MAHAPATRA, S |
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Subject |
mosfet
stress effects thermal stability |
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Description |
An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution (ldquotime-zerordquo delay) down to 1 mus and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.
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Publisher |
IEEE
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Date |
2009-01-11T06:40:57Z
2011-11-25T16:27:49Z 2011-12-26T13:05:45Z 2011-12-27T05:53:06Z 2009-01-11T06:40:57Z 2011-11-25T16:27:49Z 2011-12-26T13:05:45Z 2011-12-27T05:53:06Z 2008 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 55 (10), 2614-2622
0018-9383 http://dx.doi.org/10.1109/TED.2008.2003224 http://hdl.handle.net/10054/552 http://dspace.library.iitb.ac.in/xmlui/handle/10054/552 |
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Language |
en
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