Record Details

Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Development of an ultrafast on-the-fly I DLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs
 
Creator MAHETA, VD
NARESH KUMAR, E
PURAWAT, S
OLSEN, C
AHMED, K
MAHAPATRA, S
 
Subject mosfet
stress effects
thermal stability
 
Description An ultrafast on-the-fly technique is developed to study linear drain current (I DLIN) degradation in plasma and thermal oxynitride p-MOSFETs during negative-bias temperature instability (NBTI) stress. The technique enhances the measurement resolution (ldquotime-zerordquo delay) down to 1 mus and helps to identify several key differences in NBTI behavior between plasma and thermal films. The impact of the time-zero delay on time, temperature, and bias dependence of NBTI is studied, and its influence on extrapolated safe-operating overdrive condition is analyzed. It is shown that plasma-nitrided films, in spite of having higher N density, are less susceptible to NBTI than their thermal counterparts.
 
Publisher IEEE
 
Date 2009-01-11T06:40:57Z
2011-11-25T16:27:49Z
2011-12-26T13:05:45Z
2011-12-27T05:53:06Z
2009-01-11T06:40:57Z
2011-11-25T16:27:49Z
2011-12-26T13:05:45Z
2011-12-27T05:53:06Z
2008
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 55 (10), 2614-2622
0018-9383
http://dx.doi.org/10.1109/TED.2008.2003224
http://hdl.handle.net/10054/552
http://dspace.library.iitb.ac.in/xmlui/handle/10054/552
 
Language en