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Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

DSpace at IIT Bombay

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Title Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs
 
Creator ANIL, KG
MAHAPATRA, S
EISELE, I
 
Subject monte carlo methods
electron-phonon interactions
semiconductor devices breakdown
hot carriers
impact ionization
 
Description Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (ISUB ) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC, is due to electron-electron interactions.
 
Publisher IEEE
 
Date 2009-02-04T06:09:28Z
2011-11-25T16:36:21Z
2011-12-26T13:05:47Z
2011-12-27T05:53:24Z
2009-02-04T06:09:28Z
2011-11-25T16:36:21Z
2011-12-26T13:05:47Z
2011-12-27T05:53:24Z
2002
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 49(7), 1283-1288
0018-9383
http://dx.doi.org/10.1109/TED.2002.1013287
http://hdl.handle.net/10054/605
http://dspace.library.iitb.ac.in/xmlui/handle/10054/605
 
Language en