Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs
DSpace at IIT Bombay
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Title |
Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs
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Creator |
ANIL, KG
MAHAPATRA, S EISELE, I |
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Subject |
monte carlo methods
electron-phonon interactions semiconductor devices breakdown hot carriers impact ionization |
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Description |
Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (ISUB ) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC, is due to electron-electron interactions.
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Publisher |
IEEE
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Date |
2009-02-04T06:09:28Z
2011-11-25T16:36:21Z 2011-12-26T13:05:47Z 2011-12-27T05:53:24Z 2009-02-04T06:09:28Z 2011-11-25T16:36:21Z 2011-12-26T13:05:47Z 2011-12-27T05:53:24Z 2002 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 49(7), 1283-1288
0018-9383 http://dx.doi.org/10.1109/TED.2002.1013287 http://hdl.handle.net/10054/605 http://dspace.library.iitb.ac.in/xmlui/handle/10054/605 |
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Language |
en
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