A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDE
DSpace at IIT Bombay
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Title |
A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDE
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Creator |
VASUDEVAN, V
VASI, J |
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Subject |
irradiation
model |
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Description |
The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study the buildup of charge in silicon dioxide due to radiation. The flat-band voltage shift (DELTA-V(fb)) is obtained as a function of total dose, the oxide thickness, the applied gate voltage, and the centroid of the trap distribution. The effect of including electron traps is studied. The results of the simulation are found to compare well with experimental data.
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Publisher |
AMER INST PHYSICS
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Date |
2011-07-15T12:11:29Z
2011-12-26T12:49:29Z 2011-12-27T05:53:49Z 2011-07-15T12:11:29Z 2011-12-26T12:49:29Z 2011-12-27T05:53:49Z 1991 |
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Type |
Article
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Identifier |
JOURNAL OF APPLIED PHYSICS, 70(8), 4490-4495
0021-8979 http://dx.doi.org/10.1063/1.349083 http://dspace.library.iitb.ac.in/xmlui/handle/10054/4271 http://hdl.handle.net/10054/4271 |
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Language |
en
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