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A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDE

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Field Value
 
Title A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDE
 
Creator VASUDEVAN, V
VASI, J
 
Subject irradiation
model
 
Description The one-dimensional Poisson, continuity, and the trap rate equations are solved numerically to study the buildup of charge in silicon dioxide due to radiation. The flat-band voltage shift (DELTA-V(fb)) is obtained as a function of total dose, the oxide thickness, the applied gate voltage, and the centroid of the trap distribution. The effect of including electron traps is studied. The results of the simulation are found to compare well with experimental data.
 
Publisher AMER INST PHYSICS
 
Date 2011-07-15T12:11:29Z
2011-12-26T12:49:29Z
2011-12-27T05:53:49Z
2011-07-15T12:11:29Z
2011-12-26T12:49:29Z
2011-12-27T05:53:49Z
1991
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 70(8), 4490-4495
0021-8979
http://dx.doi.org/10.1063/1.349083
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4271
http://hdl.handle.net/10054/4271
 
Language en