Record Details

Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injection

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Lateral profiling of trapped charge in SONOS flash EEPROMs programmed using CHE injection
 
Creator MAHAPATRA, S
BHARATH KUMAR, P
NAIR, PR
SHARMA, RAVINDER
KAMOHARA, S
 
Subject computer simulation
flash memory
semiconducting silicon
monte carlo methods
 
Description The lateral profile of trapped charge in a silicon-oxide-nitride-oxide-silicon (SONOS) electrically erasable programmable read-only memory programmed using channel-hot-electron injection is determined using current-voltage (ID-VG) measurements along with two-dimensional device simulations and is verified using gate-induced-drain-leakage measurements, charge-pumping (CP) measurements, and Monte Carlo simulations. An iterative procedure is used to match simulated ID-VG characteristics with experimental ID-VG characteristics at different stages of programming, by sequentially increasing the trapped electron charge in simulations. Fresh cells are found to contain a high laterally nonuniform trapped charge, which (along with large electron injection during the program) make the conventional CP techniques inadequate for extracting the charge profile. This charge results in a nonmonotonous variation of threshold and flat-band voltages along the channel and makes it impossible to simultaneously determine interface and trapped charge profiles using CP alone. The CP technique is modified for application to SONOS cells and is used to verify the charge profile obtained using ID-VG and to estimate the interface degradation. This paper enhances the study presented in our earlier work.
 
Publisher IEEE
 
Date 2008-11-25T05:57:18Z
2011-11-25T12:39:47Z
2011-12-26T13:05:55Z
2011-12-27T05:53:50Z
2008-11-25T05:57:18Z
2011-11-25T12:39:47Z
2011-12-26T13:05:55Z
2011-12-27T05:53:50Z
2006
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 53(4), 698-05
0018-9383
http://dx.doi.org/10.1109/TED.2006.870533
http://hdl.handle.net/10054/138
http://dspace.library.iitb.ac.in/xmlui/handle/10054/138
 
Language en_US