The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance
DSpace at IIT Bombay
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Title |
The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance
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Creator |
DESAI, MP
MOHAPATRA, NR NARENDRA, SG RAMGOPAL RAO, V |
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Subject |
computer simulation
electric insulators monte carlo methods capacitance |
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Description |
The potential impact of high permittivity gate dielectrics on device short channel and circuit performance is studied over a wide range of dielectric permittivities (Kgate) using two-dimensional (2-D) device and Monte Carlo simulations. The gate-to-channel capacitance and parasitic fringe capacitances are extracted using a highly accurate three-dimensional (3-D) capacitance extractor. It is observed that there is a decrease in parasitic outer fringe capacitance and gate-to-channel capacitance in addition to an increase in internal fringe capacitance, when the conventional silicon dioxide is replaced by a high-K gate dielectric. The lower parasitic outer fringe capacitance is beneficial for the circuit performance, while the increase in internal fringe capacitance and the decrease in the gate-to-channel capacitance will degrade the short channel performance contributing to higher DIBL, drain leakage, and lower noise margin. It is shown that using low-K gate sidewalls with high-K gate insulators can decrease the fringing-induced barrier lowering. Also, from the circuit point of view, for the 70-nm technology generation, the presence of an optimum Kgate for different target subthreshold leakage currents has been identified.
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Publisher |
IEEE
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Date |
2008-11-21T06:49:43Z
2011-11-25T12:35:46Z 2011-12-26T13:06:15Z 2011-12-27T05:54:04Z 2008-11-21T06:49:43Z 2011-11-25T12:35:46Z 2011-12-26T13:06:15Z 2011-12-27T05:54:04Z 2002 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 49 (5), 826-31
0018-9383 http://dx.doi.org/10.1109/16.998591 http://hdl.handle.net/10054/80 http://dspace.library.iitb.ac.in/xmlui/handle/10054/80 |
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Language |
en_US
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