Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface
DSpace at IIT Bombay
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Title |
Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface
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Creator |
MAHAPATRA, S
VARGHESE, D ALAM, MA |
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Subject |
elemental semiconductors
hole traps interface states silicon compounds sstress effects |
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Description |
The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function of hole energy. By observing the time dependence of generation during stress and the amount of recovery after stress, it is shown that ΔNIT is due to both broken ≡Si--H and ≡Si--O-- bonds, their ratio governed by hole energy. In the absence of hot holes ΔNIT is primarily composed of broken ≡Si--H, which show a lower power-law time exponent and a fraction of which anneal after stress. Additional ΔNIT is created in the presence of hot holes, which is due to broken ≡Si--O-- bonds. These traps show a much larger power-law time exponent, and they do not anneal after stress. These observations have important implications for lifetime prediction under negative bias temperature instability, Fowler-Nordheim, and hot carrier injection stress conditions.
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Publisher |
IEEE
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Date |
2008-11-25T05:55:52Z
2011-11-25T12:26:15Z 2011-12-26T13:06:18Z 2011-12-27T05:54:06Z 2008-11-25T05:55:52Z 2011-11-25T12:26:15Z 2011-12-26T13:06:18Z 2011-12-27T05:54:06Z 2005 |
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Type |
Article
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Identifier |
IEEE Electron Device Letters 26(8), 572-74
0741-3106 http://dx.doi.org/10.1109/LED.2005.852739 http://hdl.handle.net/10054/135 http://dspace.library.iitb.ac.in/xmlui/handle/10054/135 |
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Language |
en_US
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