Record Details

Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface
 
Creator MAHAPATRA, S
VARGHESE, D
ALAM, MA
 
Subject elemental semiconductors
hole traps
interface states
silicon compounds
sstress effects
 
Description The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function of hole energy. By observing the time dependence of generation during stress and the amount of recovery after stress, it is shown that ΔNIT is due to both broken ≡Si--H and ≡Si--O-- bonds, their ratio governed by hole energy. In the absence of hot holes ΔNIT is primarily composed of broken ≡Si--H, which show a lower power-law time exponent and a fraction of which anneal after stress. Additional ΔNIT is created in the presence of hot holes, which is due to broken ≡Si--O-- bonds. These traps show a much larger power-law time exponent, and they do not anneal after stress. These observations have important implications for lifetime prediction under negative bias temperature instability, Fowler-Nordheim, and hot carrier injection stress conditions.
 
Publisher IEEE
 
Date 2008-11-25T05:55:52Z
2011-11-25T12:26:15Z
2011-12-26T13:06:18Z
2011-12-27T05:54:06Z
2008-11-25T05:55:52Z
2011-11-25T12:26:15Z
2011-12-26T13:06:18Z
2011-12-27T05:54:06Z
2005
 
Type Article
 
Identifier IEEE Electron Device Letters 26(8), 572-74
0741-3106
http://dx.doi.org/10.1109/LED.2005.852739
http://hdl.handle.net/10054/135
http://dspace.library.iitb.ac.in/xmlui/handle/10054/135
 
Language en_US