A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis
DSpace at IIT Bombay
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Title |
A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis
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Creator |
ROY, AS
VASI, J PATIL, MB |
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Subject |
galerkin method
mosfet inversion layers semiconductor device models variational techniques |
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Description |
We present a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation. The model derived here is based on the large-signal NQS model previously proposed. The derivation of the small-signal model is presented. The small-signal parameters obtained with this model prove to be accurate up to very high frequencies. An excellent match between the new model and device simulation results has been observed even when the frequency is many times larger than the cutoff frequency.
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Publisher |
IEEE
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Date |
2008-11-21T06:41:14Z
2011-11-25T12:22:44Z 2011-12-26T13:06:20Z 2011-12-27T05:54:10Z 2008-11-21T06:41:14Z 2011-11-25T12:22:44Z 2011-12-26T13:06:20Z 2011-12-27T05:54:10Z 2003 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 50(12), 2401 - 07
0018-9383 http://dx.doi.org/10.1109/TED.2003.819054 http://hdl.handle.net/10054/68 http://dspace.library.iitb.ac.in/xmlui/handle/10054/68 |
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Language |
en_US
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