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A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis

DSpace at IIT Bombay

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Title A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis
 
Creator ROY, AS
VASI, J
PATIL, MB
 
Subject galerkin method
mosfet
inversion layers
semiconductor device models
variational techniques
 
Description We present a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation. The model derived here is based on the large-signal NQS model previously proposed. The derivation of the small-signal model is presented. The small-signal parameters obtained with this model prove to be accurate up to very high frequencies. An excellent match between the new model and device simulation results has been observed even when the frequency is many times larger than the cutoff frequency.
 
Publisher IEEE
 
Date 2008-11-21T06:41:14Z
2011-11-25T12:22:44Z
2011-12-26T13:06:20Z
2011-12-27T05:54:10Z
2008-11-21T06:41:14Z
2011-11-25T12:22:44Z
2011-12-26T13:06:20Z
2011-12-27T05:54:10Z
2003
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 50(12), 2401 - 07
0018-9383
http://dx.doi.org/10.1109/TED.2003.819054
http://hdl.handle.net/10054/68
http://dspace.library.iitb.ac.in/xmlui/handle/10054/68
 
Language en_US