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Low temperature-high pressure grown thin gate dielectrics for MOS applications

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Title Low temperature-high pressure grown thin gate dielectrics for MOS applications
 
Creator RAMGOPAL RAO, V
MAHAPATRA, S
SHARMA, DK
VASI, J
GRABOLLA, T
EISELE, I
HANSCH, W
 
Subject mosfet devices
semiconductor growth
deposition
dielectric materials
optimization
 
Description In this study we propose high pressure grown oxide (HIPOX) as an alternative low-temperature MOS gate insulator and show that it performs excellently in comparison to other widely reported low-temperature deposited oxides. Our optimized process conditions for HIPOX result in high quality gate dielectric comparable in quality to the standard thermal dry oxide in terms of initial properties as well as under various stress conditions. Sub 100 nm channel length vertical MOSFETs with HIPOX as a gate dielectric are fabricated and characterized to demonstrate the suitability of HIPOX as a low-temperature MOS gate dielectric.
Copyright Elsevier Publisher
 
Publisher Elsevier
 
Date 2007-02-26T17:28:51Z
2011-11-25T12:03:32Z
2011-12-26T13:06:42Z
2011-12-27T05:54:43Z
2007-02-26T17:28:51Z
2011-11-25T12:03:32Z
2011-12-26T13:06:42Z
2011-12-27T05:54:43Z
1999
 
Type Article
 
Identifier Microelectronic Engineering 48 (1-4), 223-226
0167-9317
http://dx.doi.org/10.1016/S0167-9317(99)00375-5
http://hdl.handle.net/10054/51
http://dspace.library.iitb.ac.in/xmlui/handle/10054/51