Low temperature-high pressure grown thin gate dielectrics for MOS applications
DSpace at IIT Bombay
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Title |
Low temperature-high pressure grown thin gate dielectrics for MOS applications
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Creator |
RAMGOPAL RAO, V
MAHAPATRA, S SHARMA, DK VASI, J GRABOLLA, T EISELE, I HANSCH, W |
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Subject |
mosfet devices
semiconductor growth deposition dielectric materials optimization |
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Description |
In this study we propose high pressure grown oxide (HIPOX) as an alternative low-temperature MOS gate insulator and show that it performs excellently in comparison to other widely reported low-temperature deposited oxides. Our optimized process conditions for HIPOX result in high quality gate dielectric comparable in quality to the standard thermal dry oxide in terms of initial properties as well as under various stress conditions. Sub 100 nm channel length vertical MOSFETs with HIPOX as a gate dielectric are fabricated and characterized to demonstrate the suitability of HIPOX as a low-temperature MOS gate dielectric.
Copyright Elsevier Publisher |
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Publisher |
Elsevier
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Date |
2007-02-26T17:28:51Z
2011-11-25T12:03:32Z 2011-12-26T13:06:42Z 2011-12-27T05:54:43Z 2007-02-26T17:28:51Z 2011-11-25T12:03:32Z 2011-12-26T13:06:42Z 2011-12-27T05:54:43Z 1999 |
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Type |
Article
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Identifier |
Microelectronic Engineering 48 (1-4), 223-226
0167-9317 http://dx.doi.org/10.1016/S0167-9317(99)00375-5 http://hdl.handle.net/10054/51 http://dspace.library.iitb.ac.in/xmlui/handle/10054/51 |
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