On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model
DSpace at IIT Bombay
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Title |
On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model
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Creator |
MAHAPATRA, S
SAHA, D VARGHESE, D |
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Subject |
chemical bonds
hot carriers mathematical models electron traps |
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Description |
The generation and recovery of interface traps (NIT) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of NIT generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken ≡Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken ≡Si-O bonds also plays a major role in determining the overall NIT generation and recovery behavior.
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Publisher |
IEEE
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Date |
2008-11-25T05:56:45Z
2011-11-25T12:30:45Z 2011-12-26T13:06:53Z 2011-12-27T05:54:51Z 2008-11-25T05:56:45Z 2011-11-25T12:30:45Z 2011-12-26T13:06:53Z 2011-12-27T05:54:51Z 2006 |
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Type |
Article
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Identifier |
IEEE Electron Device Letters 27(3), 188-90
0741-3106 http://dx.doi.org/10.1109/LED.2006.870241 http://hdl.handle.net/10054/136 http://dspace.library.iitb.ac.in/xmlui/handle/10054/136 |
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Language |
en_US
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