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On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model

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Title On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D model
 
Creator MAHAPATRA, S
SAHA, D
VARGHESE, D
 
Subject chemical bonds
hot carriers
mathematical models
electron traps
 
Description The generation and recovery of interface traps (NIT) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of NIT generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken ≡Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken ≡Si-O bonds also plays a major role in determining the overall NIT generation and recovery behavior.
 
Publisher IEEE
 
Date 2008-11-25T05:56:45Z
2011-11-25T12:30:45Z
2011-12-26T13:06:53Z
2011-12-27T05:54:51Z
2008-11-25T05:56:45Z
2011-11-25T12:30:45Z
2011-12-26T13:06:53Z
2011-12-27T05:54:51Z
2006
 
Type Article
 
Identifier IEEE Electron Device Letters 27(3), 188-90
0741-3106
http://dx.doi.org/10.1109/LED.2006.870241
http://hdl.handle.net/10054/136
http://dspace.library.iitb.ac.in/xmlui/handle/10054/136
 
Language en_US