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Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide

DSpace at IIT Bombay

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Field Value
 
Title Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide
 
Creator CHANDORKAR, AN
RAMESH, K
AGARWAL, A
VASI, J
 
Subject dielectric thin films
electron traps
nitridation
radiation hardening (electronics)
 
Description A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO2, but is not the sole cause of it.
 
Publisher IEEE
 
Date 2008-11-21T06:57:10Z
2011-11-25T12:39:17Z
2011-12-26T13:07:15Z
2011-12-27T05:55:23Z
2008-11-21T06:57:10Z
2011-11-25T12:39:17Z
2011-12-26T13:07:15Z
2011-12-27T05:55:23Z
1991
 
Type Article
 
Identifier IEEE Electron Device Letters 12 (12), 658-60
0741-3106
http://dx.doi.org/10.1109/55.116946
http://hdl.handle.net/10054/83
http://dspace.library.iitb.ac.in/xmlui/handle/10054/83
 
Language en_US