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Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress

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Title Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress
 
Creator MAHAPATRA, S
SAHA, D
VARGHESE, D
 
Subject gates (transistor)
interfaces (materials)
hot carriers
electron traps
 
Description Interface trap (NIT) generation and recovery due to broken ≡Si-H bonds at the Si/SiO2 interface is studied during and after hot carrier injection (HCI) stress and verified by a two-dimensional reaction-diffusion model. NIT generation and recovery characteristics do not correlate with channel hot electron (HE) density distribution (verified by Monte Carlo simulations). Anode hole injection, which is triggered by HE injection into the gate poly, and valence band hole tunneling, which is triggered for thinner oxides, must be invoked to properly explain experimental results. The observed hole-induced, not electron-induced, breaking of ≡Si-H bonds during HCI stress is also consistent with that for negative bias temperature instability stress.
 
Publisher IEEE
 
Date 2008-11-25T10:54:47Z
2011-11-25T12:58:20Z
2011-12-26T13:08:02Z
2011-12-27T05:56:03Z
2008-11-25T10:54:47Z
2011-11-25T12:58:20Z
2011-12-26T13:08:02Z
2011-12-27T05:56:03Z
2006
 
Type Article
 
Identifier IEEE Electron Device Letters 27(7), 585-87
0741-3106
http://dx.doi.org/10.1109/LED.2006.876310
http://hdl.handle.net/10054/143
http://dspace.library.iitb.ac.in/xmlui/handle/10054/143
 
Language en_US