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Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs

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Title Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs
 
Creator MAHAPATRA, S
RAMGOPAL RAO, V
CHENG, B
KHARE, M
PARIKH, CD
WOO, JCS
VASI, J
 
Subject misfet
dielectric thin films
electron traps
elemental semiconductors
semiconductor device reliability
silicon compounds
 
Description Metal-nitride-semiconductor FETs (MNSFETs) having channel lengths down to 100 mm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs.
 
Publisher IEEE
 
Date 2008-11-24T05:35:06Z
2011-11-25T12:59:50Z
2011-12-26T13:08:10Z
2011-12-27T05:56:11Z
2008-11-24T05:35:06Z
2011-11-25T12:59:50Z
2011-12-26T13:08:10Z
2011-12-27T05:56:11Z
2001
 
Type Article
 
Identifier IEEE Transactions on Electron Devices 48(4), 679-84
0018-9383
http://dx.doi.org/10.1109/16.915686
http://hdl.handle.net/10054/118
http://dspace.library.iitb.ac.in/xmlui/handle/10054/118
 
Language en_US