A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis
DSpace at IIT Bombay
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Title |
A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis
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Creator |
ROY, AS
VASI, J PATIL, MB |
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Subject |
galerkin method
mosfet inversion layers semiconductor device models variational techniques |
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Description |
This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.
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Publisher |
IEEE
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Date |
2008-11-25T05:57:49Z
2011-11-25T12:48:18Z 2011-12-26T13:08:13Z 2011-12-27T05:56:13Z 2008-11-25T05:57:49Z 2011-11-25T12:48:18Z 2011-12-26T13:08:13Z 2011-12-27T05:56:13Z 2003 |
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Type |
Article
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Identifier |
IEEE Transactions on Electron Devices 50(12), 2393-2400
0018-9383 http://dx.doi.org/10.1109/TED.2003.819053 http://hdl.handle.net/10054/140 http://dspace.library.iitb.ac.in/xmlui/handle/10054/140 |
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Language |
en_US
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