A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
DSpace at IIT Bombay
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Title |
A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
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Creator |
MAHAPATRA, S
PARIKH, CD VASI, J RAMGOPAL RAO, V VISWANATHAN, CR |
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Subject |
curve fitting
electron traps electronic density of states mosfet semiconductor device testing interface states |
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Description |
A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data.
Copyright to Elsevier Publisher |
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Publisher |
Elsevier
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Date |
2007-02-26T17:28:26Z
2011-11-25T11:32:36Z 2011-12-26T13:08:18Z 2011-12-27T05:56:19Z 2007-02-26T17:28:26Z 2011-11-25T11:32:36Z 2011-12-26T13:08:18Z 2011-12-27T05:56:19Z 1999 |
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Type |
Article
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Identifier |
Solid-State Electronics 43 (5), 915-22
0038-1101 http://dx.doi.org/10.1016/S0038-1101(98)00326-8 http://hdl.handle.net/10054/50 http://dspace.library.iitb.ac.in/xmlui/handle/10054/50 |
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