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A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

DSpace at IIT Bombay

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Title A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
 
Creator MAHAPATRA, S
PARIKH, CD
VASI, J
RAMGOPAL RAO, V
VISWANATHAN, CR
 
Subject curve fitting
electron traps
electronic density of states
mosfet
semiconductor device testing
interface states
 
Description A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data.
Copyright to Elsevier Publisher
 
Publisher Elsevier
 
Date 2007-02-26T17:28:26Z
2011-11-25T11:32:36Z
2011-12-26T13:08:18Z
2011-12-27T05:56:19Z
2007-02-26T17:28:26Z
2011-11-25T11:32:36Z
2011-12-26T13:08:18Z
2011-12-27T05:56:19Z
1999
 
Type Article
 
Identifier Solid-State Electronics 43 (5), 915-22
0038-1101
http://dx.doi.org/10.1016/S0038-1101(98)00326-8
http://hdl.handle.net/10054/50
http://dspace.library.iitb.ac.in/xmlui/handle/10054/50