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Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs

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Title Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs
 
Creator ANIL, KG
MAHAPATRA, S
EISELE, I
 
Subject monte carlo methods
semiconducting silicon
computer simulation
channel capacity
 
Description Sensitive quantum-yield measurements (M) on n-channel MOSFETs for drain voltages (VD) near the bandgap voltage of silicon, showed an abnormal bell-shaped M versus gate voltage (VG) characteristic at 77 K. At higher VD, M decreases monotonously with increasing VG. Measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups and provide simultaneous experimental verification for the presence of a tail that depends strongly on lattice temperature and electron-electron interaction (EEI) broadening of the tail. Our data suggest EEI broadening of the tail even in the subthreshold regime.
 
Publisher IEEE
 
Date 2009-01-05T13:00:21Z
2011-11-25T16:25:49Z
2011-12-26T13:08:20Z
2011-12-27T05:56:20Z
2009-01-05T13:00:21Z
2011-11-25T16:25:49Z
2011-12-26T13:08:20Z
2011-12-27T05:56:20Z
2001
 
Type Article
 
Identifier IEEE Electron Device Letters 22 (10), 478-480
0741-3106
http://dx.doi.org/10.1109/55.954917
http://hdl.handle.net/10054/545
http://dspace.library.iitb.ac.in/xmlui/handle/10054/545
 
Language en