Effect of sputtering on ferromagnet-oxide-silicon spin injection contacts
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Effect of sputtering on ferromagnet-oxide-silicon spin injection contacts
|
|
Creator |
GUNDAPANENI, S
GANGULY, S VAN ROY, W KAUSHAL, S SUGISHIMA, K |
|
Subject |
SEMICONDUCTOR
METAL aluminium cobalt alloys contact resistance electrostatics elemental semiconductors ferromagnetic materials iron alloys magnetic thin films magnetoresistance metallic thin films MIS structures photoemission silicon silicon compounds spin polarised transport sputter deposition work function |
|
Description |
The authors have fabricated metal-oxide-semiconductor (MOS) contacts on silicon for spin injection and detection and characterized them by internal photoemission and capacitance-voltage (C-V) measurements with the aim of extracting the metal- semiconductor effective work-function mismatch that determines the magnetoresistance between such contacts. The authors show that sputter deposition of these contacts induces high levels of negative charge in the oxide localized close to the metal-oxide interface. This is seen to affect the electrostatics of the MOS contact and could thereby impact its contact resistance, and in turn, the magnetoresistance that one can obtain. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3601119]
|
|
Publisher |
A V S AMER INST PHYSICS
|
|
Date |
2012-02-08T18:39:08Z
2012-02-08T18:39:08Z 2011 |
|
Type |
Article
|
|
Identifier |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,29(4)-
1071-1023 http://dx.doi.org/10.1116/1.3601119 http://dspace.library.iitb.ac.in/jspui/handle/100/13830 |
|
Language |
English
|
|