Record Details

Effect of sputtering on ferromagnet-oxide-silicon spin injection contacts

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Effect of sputtering on ferromagnet-oxide-silicon spin injection contacts
 
Creator GUNDAPANENI, S
GANGULY, S
VAN ROY, W
KAUSHAL, S
SUGISHIMA, K
 
Subject SEMICONDUCTOR
METAL
aluminium
cobalt alloys
contact resistance
electrostatics
elemental semiconductors
ferromagnetic materials
iron alloys
magnetic thin films
magnetoresistance
metallic thin films
MIS structures
photoemission
silicon
silicon compounds
spin polarised transport
sputter deposition
work function
 
Description The authors have fabricated metal-oxide-semiconductor (MOS) contacts on silicon for spin injection and detection and characterized them by internal photoemission and capacitance-voltage (C-V) measurements with the aim of extracting the metal- semiconductor effective work-function mismatch that determines the magnetoresistance between such contacts. The authors show that sputter deposition of these contacts induces high levels of negative charge in the oxide localized close to the metal-oxide interface. This is seen to affect the electrostatics of the MOS contact and could thereby impact its contact resistance, and in turn, the magnetoresistance that one can obtain. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3601119]
 
Publisher A V S AMER INST PHYSICS
 
Date 2012-02-08T18:39:08Z
2012-02-08T18:39:08Z
2011
 
Type Article
 
Identifier JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,29(4)-
1071-1023
http://dx.doi.org/10.1116/1.3601119
http://dspace.library.iitb.ac.in/jspui/handle/100/13830
 
Language English