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a-Si/SiN (x) multilayered light absorber for solar cell

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Title a-Si/SiN (x) multilayered light absorber for solar cell
 
Creator PANCHAL, AK
RAI, DK
MATHEW, M
SOLANKI, CS
 
Subject CHEMICAL-VAPOR-DEPOSITION
HOT-WIRE CVD
AMORPHOUS-SILICON
QUANTUM-WELLS
TANDEM CELLS
NITRIDE
a-Si/SiN(x) multilayer
HR-TEM
I-V
p-i-n Solar cell
HWCVD
Quantum confinement effect
Quantum well
Energy conversion
 
Description 40 alternate a-Si/SiN (x) multilayer are incorporated as an absorber layer in a p-i-n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN (x) layers. The a-Si and SiN (x) layers have thickness of similar to 3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of similar to 2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current-voltage (I-V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p-i-n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V (OC)). The increment of bandgap energy in PL and high V (OC) of the device is attributed to the quantum confinement effect (QCE).
 
Publisher SPRINGER
 
Date 2012-06-26T05:32:26Z
2012-06-26T05:32:26Z
2011
 
Type Article
 
Identifier JOURNAL OF NANOPARTICLE RESEARCH,13(6)2469-2473
1388-0764
http://dx.doi.org/10.1007/s11051-010-0139-4
http://dspace.library.iitb.ac.in/jspui/handle/100/13977
 
Language English