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Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD

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Title Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVD
 
Creator KSHIRSAGAR, A
NYAUPANE, P
BODAS, D
DUTTAGUPTA, SP
GANGAL, SA
 
Subject CHEMICAL-VAPOR-DEPOSITION
HETEROSTRUCTURE BIPOLAR-TRANSISTORS
THIN-FILMS
SINX FILMS
SPECTROSCOPY
PASSIVATION
DIOXIDE
DEVICES
STRESS
GROWTH
Silicon nitride
Inductively coupled plasma
Low temperature
 
Description Silicon nitride films have been deposited at a low temperature (70 degrees C) by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique and their physical and chemical properties were studied. For a deposited SiN sample, beta-phase was observed and refractive index of 2.1 at 13.18 nm/min deposition rate was obtained. The attained stress of 0.08 GPa is lower as compared to the reported value of 1.1 GPa for SiN thin films. To study the deposited film, characterization was performed using X-ray photoelectron spectra (XPS). X-ray diffraction (XRD), micro Raman spectroscopy, Fourier transfer infrared spectroscopy (FTIR), cross-section scanning electron microscopy (SEM) and atomic force microscopy (AFM). (C) 2011 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2012-06-26T06:14:07Z
2012-06-26T06:14:07Z
2011
 
Type Article
 
Identifier APPLIED SURFACE SCIENCE,257(11)5052-5058
0169-4332
http://dx.doi.org/10.1016/j.apsusc.2011.01.020
http://dspace.library.iitb.ac.in/jspui/handle/100/14019
 
Language English