Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor
|
|
Creator |
ARORA, VK
ABIDIN, MSZ TEMBHURNE, S RIYADI, MA |
|
Subject |
LOW-DIMENSIONAL NANOSTRUCTURES
IMPURITY SCATTERING SATURATION VELOCITY CARRIER MOBILITY TRANSPORT SIMULATION MOSFETS |
|
Description |
The degradation of ballistic mobility in a metal-oxide semiconductor field-effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path. Apparent contradiction between the rise of magnetoresistance mobility and fall of drift mobility with increasing channel concentration is attributed to scattering-dependent magnetoresistance factor. The ballistic mean free path of injected carriers is found to be substantially higher than the long-channel drift mean free path. Excellent agreement with the experimental data on length-limited ballistic mobility is obtained. (C) 2011 American Institute of Physics. [doi:10.1063/1.3621885]
|
|
Publisher |
AMER INST PHYSICS
|
|
Date |
2012-06-26T09:47:54Z
2012-06-26T09:47:54Z 2011 |
|
Type |
Article
|
|
Identifier |
APPLIED PHYSICS LETTERS,99(6)-
0003-6951 http://dx.doi.org/10.1063/1.3621885 http://dspace.library.iitb.ac.in/jspui/handle/100/14326 |
|
Language |
English
|
|