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Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor

DSpace at IIT Bombay

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Title Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor
 
Creator ARORA, VK
ABIDIN, MSZ
TEMBHURNE, S
RIYADI, MA
 
Subject LOW-DIMENSIONAL NANOSTRUCTURES
IMPURITY SCATTERING
SATURATION VELOCITY
CARRIER MOBILITY
TRANSPORT
SIMULATION
MOSFETS
 
Description The degradation of ballistic mobility in a metal-oxide semiconductor field-effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path. Apparent contradiction between the rise of magnetoresistance mobility and fall of drift mobility with increasing channel concentration is attributed to scattering-dependent magnetoresistance factor. The ballistic mean free path of injected carriers is found to be substantially higher than the long-channel drift mean free path. Excellent agreement with the experimental data on length-limited ballistic mobility is obtained. (C) 2011 American Institute of Physics. [doi:10.1063/1.3621885]
 
Publisher AMER INST PHYSICS
 
Date 2012-06-26T09:47:54Z
2012-06-26T09:47:54Z
2011
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS,99(6)-
0003-6951
http://dx.doi.org/10.1063/1.3621885
http://dspace.library.iitb.ac.in/jspui/handle/100/14326
 
Language English