Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars
DSpace at IIT Bombay
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Title |
Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars
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Creator |
GHOSH, A
BHASKER, HP MUKHERJEE, A KUNDU, T SINGH, BP DHAR, S DE, S CHOWDHURY, A |
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Subject |
OPTICAL-PROPERTIES
LAYERS NANOWIRES SAPPHIRE GROWTH HVPE |
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Description |
High density of c-axis oriented tapered GaN nanopillars are fabricated simply by exposing GaN epitaxial layers in argon-chlorine plasma without any prior lithographic processing. The nature and the formation process of the pillars are investigated by different optical and structural characterization techniques. Our study reveals that the pillars are columnar inversion domains with distinctly different optical properties as compared to the bulk. These are formed as a result of a polarity selective etching process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622142]
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Publisher |
AMER INST PHYSICS
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Date |
2012-06-26T09:48:24Z
2012-06-26T09:48:24Z 2011 |
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Type |
Article
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Identifier |
JOURNAL OF APPLIED PHYSICS,110(3)-
0021-8979 http://dx.doi.org/10.1063/1.3622142 http://dspace.library.iitb.ac.in/jspui/handle/100/14327 |
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Language |
English
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