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Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars

DSpace at IIT Bombay

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Title Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars
 
Creator GHOSH, A
BHASKER, HP
MUKHERJEE, A
KUNDU, T
SINGH, BP
DHAR, S
DE, S
CHOWDHURY, A
 
Subject OPTICAL-PROPERTIES
LAYERS
NANOWIRES
SAPPHIRE
GROWTH
HVPE
 
Description High density of c-axis oriented tapered GaN nanopillars are fabricated simply by exposing GaN epitaxial layers in argon-chlorine plasma without any prior lithographic processing. The nature and the formation process of the pillars are investigated by different optical and structural characterization techniques. Our study reveals that the pillars are columnar inversion domains with distinctly different optical properties as compared to the bulk. These are formed as a result of a polarity selective etching process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622142]
 
Publisher AMER INST PHYSICS
 
Date 2012-06-26T09:48:24Z
2012-06-26T09:48:24Z
2011
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS,110(3)-
0021-8979
http://dx.doi.org/10.1063/1.3622142
http://dspace.library.iitb.ac.in/jspui/handle/100/14327
 
Language English