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Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements

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Title Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements
 
Creator WALKE, AM
VANDOOREN, A
KACZER, B
VERHULST, AS
ROOYACKERS, R
SIMOEN, E
HEYNS, MM
RAO, VR
GROESENEKEN, G
COLLAERT, N
THEAN, AVY
 
Subject Bias stress measurements
bulk traps
characterization
fabrication
interface traps
line tunnel field-effect transistors (TFET)
subthreshold swing (SS) degradation
trap-assisted tunneling (TAT)
tunnel FET (TFET)
FIELD-EFFECT TRANSISTORS
BORON-DOPED SILICON
HYDROGEN PASSIVATION
SI
OXIDE
DEFECTS
CLUSTER
 
Description The role of trap-assisted tunneling (TAT) in the degradation of the subthreshold swing (SS) in n-type line tunnel field-effect transistors (TFETs) is investigated through the experiments and simulations. A two to fourfold increase in the interface state density is achieved by applying a positive or a negative stress between the gate and the source. The negative stress shows no impact on the SS in spite of nearly fourfold increase in the interface state density. A nearly twofold increase in interface state density and improvement in SS are observed under the application of positive stress. The improvement in SS is attributed to H+ species released from the Si/SiO2 interface during stress, which moves toward the bulk Si, passivating boron and bulk Si traps, thereby improving the SS. Under negative stress bias, the released H+ species drifts toward the gate electrode, and hence no change in SS was observed. These experiments suggest that the SS degradation is mainly caused by TAT through bulk Si traps and insensitive to interface traps. A good control of bulk semiconductor trap density will be required to achieve sub-60-mV/decade SS in line TFETs.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-14T12:47:14Z
2014-10-14T12:47:14Z
2013
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(12)4065-4072
0018-9383
1557-9646
http://dx.doi.org/10.1109/TED.2013.2287253
http://dspace.library.iitb.ac.in/jspui/handle/100/14442
 
Language en