Record Details

Room temperature ferromagnetism in thermally diffused Cr in GaN

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Room temperature ferromagnetism in thermally diffused Cr in GaN
 
Creator SUGGISETTI, P
BANERJEE, D
ADARI, R
PANDE, N
PATIL, T
GANGULY, S
SAHA, D
 
Subject DOPED GAN
MAGNETIC SEMICONDUCTORS
EPITAXY
METAL
 
Description We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material with significant increase in electron carrier concentration due to the presence of Cr. Optical property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up to 300 K with no significant change in saturation magnetization. Copyright 2013 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4799716]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-14T17:23:38Z
2014-10-14T17:23:38Z
2013
 
Type Article
 
Identifier AIP ADVANCES, 3(3)
http://dx.doi.org/10.1063/1.4799716
http://dspace.library.iitb.ac.in/jspui/handle/100/14559
 
Language en