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Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

DSpace at IIT Bombay

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Title Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
 
Creator SRINIVASAN, VSS
CHOPRA, S
KARKARE, P
BAFNA, P
LASHKARE, S
KUMBHARE, P
KIM, Y
SRINIVASAN, S
KUPPURAO, S
LODHA, S
GANGULY, U
 
Subject Bipolar resistance RAM (RRAM)
punchthrough
selectore
 
Description We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si: C process is used to deposit n(+)/p/n(+) layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of > 1 MA/cm(2) and high on/off current ratio of > 250 and > 4700 (at opposite polarities) are observed. A switching speed of < 10 ns is measured. On-voltage designability is demonstrated by tuning the p-region doping and length. The comparison of experimental IV with Sentaurus TCAD-simulated IV characteristics confirms the punchthrough mechanism. Comparison with other bipolar RRAM selector technologies highlights the overall advantages of punchthrough-based selector.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-14T17:32:54Z
2014-10-14T17:32:54Z
2012
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 33(10)1396-1398
http://dx.doi.org/10.1109/LED.2012.2209394
http://dspace.library.iitb.ac.in/jspui/handle/100/14577
 
Language en