Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
DSpace at IIT Bombay
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Title |
Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
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Creator |
SRINIVASAN, VSS
CHOPRA, S KARKARE, P BAFNA, P LASHKARE, S KUMBHARE, P KIM, Y SRINIVASAN, S KUPPURAO, S LODHA, S GANGULY, U |
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Subject |
Bipolar resistance RAM (RRAM)
punchthrough selectore |
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Description |
We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si: C process is used to deposit n(+)/p/n(+) layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of > 1 MA/cm(2) and high on/off current ratio of > 250 and > 4700 (at opposite polarities) are observed. A switching speed of < 10 ns is measured. On-voltage designability is demonstrated by tuning the p-region doping and length. The comparison of experimental IV with Sentaurus TCAD-simulated IV characteristics confirms the punchthrough mechanism. Comparison with other bipolar RRAM selector technologies highlights the overall advantages of punchthrough-based selector.
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Publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Date |
2014-10-14T17:32:54Z
2014-10-14T17:32:54Z 2012 |
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Type |
Article
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Identifier |
IEEE ELECTRON DEVICE LETTERS, 33(10)1396-1398
http://dx.doi.org/10.1109/LED.2012.2209394 http://dspace.library.iitb.ac.in/jspui/handle/100/14577 |
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Language |
en
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