A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
DSpace at IIT Bombay
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Title |
A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
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Creator |
SHRIVASTAVA, M
GOSSNER, H RAO, VR |
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Subject |
Drain extended
FinFET high voltage (HV) system-on-a-chip (SoC) TECHNOLOGY |
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Description |
A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2x better R-ON versus V-BD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
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Publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Date |
2014-10-15T08:20:38Z
2014-10-15T08:20:38Z 2012 |
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Type |
Article
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Identifier |
IEEE ELECTRON DEVICE LETTERS, 33(10)1432-1434
http://dx.doi.org/10.1109/LED.2012.2206791 http://dspace.library.iitb.ac.in/jspui/handle/100/14668 |
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Language |
en
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