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A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications

DSpace at IIT Bombay

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Title A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
 
Creator SHRIVASTAVA, M
GOSSNER, H
RAO, VR
 
Subject Drain extended
FinFET
high voltage (HV)
system-on-a-chip (SoC)
TECHNOLOGY
 
Description A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2x better R-ON versus V-BD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-10-15T08:20:38Z
2014-10-15T08:20:38Z
2012
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 33(10)1432-1434
http://dx.doi.org/10.1109/LED.2012.2206791
http://dspace.library.iitb.ac.in/jspui/handle/100/14668
 
Language en