Record Details

Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation scheme

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation scheme
 
Creator SANT, S
LODHA, S
GANGULY, U
MAHAPATRA, S
HEINZ, FO
SMITH, L
MOROZ, V
GANGULY, S
 
Subject GERMANIUM-SILICON ALLOYS
ELECTRONIC-STRUCTURE
DEFORMATION POTENTIALS
SEMICONDUCTORS
SI
HETEROSTRUCTURES
DISCONTINUITIES
SPECTROSCOPY
TEMPERATURE
GE
 
Description We present nonlocal empirical pseudopotential calculations for SiGe alloys employing a novel nonlinear interpolation scheme. Our interpolation scheme is able to correctly model for the first time the band gap bowing observed in relaxed SiGe alloys. The valence-band-edge and conduction-band-edge energies in relaxed Si1-xGex for arbitrary x, which are difficult to obtain by experimental techniques, have been evaluated using pseudopotential calculations. We have also calculated the band energies of pseudomorphic [100]-strained Si1-xGex alloys grown over unstrained Si1-yGey substrates. The energy gaps, valence and conduction band offsets, effective masses, and strain induced splittings in pseudomorphic SiGe layers are calculated for the whole range of alloy compositions x and y. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775839]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T10:30:02Z
2014-10-15T10:30:02Z
2013
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 113(3)
http://dx.doi.org/10.1063/1.4775839
http://dspace.library.iitb.ac.in/jspui/handle/100/14749
 
Language en