Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation scheme
DSpace at IIT Bombay
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Title |
Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation scheme
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Creator |
SANT, S
LODHA, S GANGULY, U MAHAPATRA, S HEINZ, FO SMITH, L MOROZ, V GANGULY, S |
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Subject |
GERMANIUM-SILICON ALLOYS
ELECTRONIC-STRUCTURE DEFORMATION POTENTIALS SEMICONDUCTORS SI HETEROSTRUCTURES DISCONTINUITIES SPECTROSCOPY TEMPERATURE GE |
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Description |
We present nonlocal empirical pseudopotential calculations for SiGe alloys employing a novel nonlinear interpolation scheme. Our interpolation scheme is able to correctly model for the first time the band gap bowing observed in relaxed SiGe alloys. The valence-band-edge and conduction-band-edge energies in relaxed Si1-xGex for arbitrary x, which are difficult to obtain by experimental techniques, have been evaluated using pseudopotential calculations. We have also calculated the band energies of pseudomorphic [100]-strained Si1-xGex alloys grown over unstrained Si1-yGey substrates. The energy gaps, valence and conduction band offsets, effective masses, and strain induced splittings in pseudomorphic SiGe layers are calculated for the whole range of alloy compositions x and y. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775839]
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Publisher |
AMER INST PHYSICS
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Date |
2014-10-15T10:30:02Z
2014-10-15T10:30:02Z 2013 |
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Type |
Article
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Identifier |
JOURNAL OF APPLIED PHYSICS, 113(3)
http://dx.doi.org/10.1063/1.4775839 http://dspace.library.iitb.ac.in/jspui/handle/100/14749 |
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Language |
en
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