Mg Doping Affects Dislocation Core Structures in GaN
DSpace at IIT Bombay
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Title |
Mg Doping Affects Dislocation Core Structures in GaN
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Creator |
RHODE, SK
HORTON, MK KAPPERS, MJ ZHANG, S HUMPHREYS, CJ DUSANE, RO SAHONTA, SL MORAM, MA |
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Subject |
THREADING EDGE DISLOCATION
SCREW DISLOCATIONS GROWTH BOUNDARIES |
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Description |
Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with both high and low dislocation densities, and in a comparable high dislocation density Mg-doped GaN film. All a-type dislocations in all samples have a 5/7-atom core structure. In contrast, most (a + c)-type dislocations in undoped GaN dissociate due to local strain variations from nearby dislocations. In contrast, Mg doping prevents (a + c)-type dislocation dissociation. Our data indicate that Mg affects dislocation cores in GaN significantly.
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Publisher |
AMER PHYSICAL SOC
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Date |
2014-10-15T10:57:37Z
2014-10-15T10:57:37Z 2013 |
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Type |
Article
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Identifier |
PHYSICAL REVIEW LETTERS, 111(2)
http://dx.doi.org/10.1103/PhysRevLett.111.025502 http://dspace.library.iitb.ac.in/jspui/handle/100/14803 |
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Language |
en
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