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Mg Doping Affects Dislocation Core Structures in GaN

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Title Mg Doping Affects Dislocation Core Structures in GaN
 
Creator RHODE, SK
HORTON, MK
KAPPERS, MJ
ZHANG, S
HUMPHREYS, CJ
DUSANE, RO
SAHONTA, SL
MORAM, MA
 
Subject THREADING EDGE DISLOCATION
SCREW DISLOCATIONS
GROWTH
BOUNDARIES
 
Description Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with both high and low dislocation densities, and in a comparable high dislocation density Mg-doped GaN film. All a-type dislocations in all samples have a 5/7-atom core structure. In contrast, most (a + c)-type dislocations in undoped GaN dissociate due to local strain variations from nearby dislocations. In contrast, Mg doping prevents (a + c)-type dislocation dissociation. Our data indicate that Mg affects dislocation cores in GaN significantly.
 
Publisher AMER PHYSICAL SOC
 
Date 2014-10-15T10:57:37Z
2014-10-15T10:57:37Z
2013
 
Type Article
 
Identifier PHYSICAL REVIEW LETTERS, 111(2)
http://dx.doi.org/10.1103/PhysRevLett.111.025502
http://dspace.library.iitb.ac.in/jspui/handle/100/14803
 
Language en