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Al-doped ZnO thin-film transistor embedded micro-cantilever as a piezoresistive sensor

DSpace at IIT Bombay

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Title Al-doped ZnO thin-film transistor embedded micro-cantilever as a piezoresistive sensor
 
Creator RAY, P
RAO, VR
 
Subject MICROCANTILEVER
FABRICATION
ARRAY
 
Description In this work, an aluminium-doped zinc oxide (AZO) thin film transistor, embedded in a polymer micro-cantilever, is demonstrated for nano-mechanical sensing applications. This device senses the surface stress due to a change in the carrier mobility of the semi-conducting layer. Due to the low Young's modulus and high strain sensitivity of the AZO layer, this micro-cantilever shows a deflection sensitivity of 116 ppm per nanometer of deflection. Also, mechanical characterization of these devices shows that the resonance frequency is in the range of a few tens of kilohertz which is suitable for sensor applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792062]
 
Publisher AMER INST PHYSICS
 
Date 2014-10-15T11:52:35Z
2014-10-15T11:52:35Z
2013
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 102(6)
http://dx.doi.org/10.1063/1.4792062
http://dspace.library.iitb.ac.in/jspui/handle/100/14835
 
Language en