GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching
DSpace at IIT Bombay
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Title |
GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching
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Creator |
RAWAL, DS
ARORA, H AGARWAL, VR VINAYAK, S KAPOOR, A SEHGAL, BK MURALIDHARAN, R SAHA, D MALIK, HK |
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Subject |
Gallium nitride
High electron mobility transistors Mesa Inductively coupled plasma etching Etch rate Surface roughness III-V NITRIDES CHLORINE PLASMA DRY ALN MECHANISMS SYSTEM MODEL INN |
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Description |
Cl-2/Ar based inductively coupled plasma (ICP) etching of GaN is investigated using photoresist mask in a consequential restricted domain of pressure < 1.2 Pa and radio frequency (RF) sample power < 100 W, for selective mesa etching. The etch characteristics and root-mean-square (rms) surface roughness are studied as a function of process parameters viz. process pressure, Cl-2 percentage in total flow rate ratio, and RF sample power at a constant ICP power, to achieve moderate GaN etch rate with anisotropic profiles and smooth surface morphology. The etch rate and resultant surface roughness of etched surface increased with pressure mainly due to dominant reactant limited etch regime. The etch rate and surface roughness show strong dependence on RF sample power with the former increasing and the later decreasing with the applied RF sample power up to 80 W. The process etch yield variation with applied RF sample power is also reported. The studied etch parameters result in highly anisotropic mesa structures with Ga rich etched surface. (C) 2012 Elsevier B.V. All rights reserved.
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Publisher |
ELSEVIER SCIENCE SA
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Date |
2014-10-15T11:55:44Z
2014-10-15T11:55:44Z 2012 |
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Type |
Article
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Identifier |
THIN SOLID FILMS, 520(24)7212-7218
http://dx.doi.org/10.1016/j.tsf.2012.07.117 http://dspace.library.iitb.ac.in/jspui/handle/100/14841 |
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Language |
en
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