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GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching

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Title GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching
 
Creator RAWAL, DS
ARORA, H
AGARWAL, VR
VINAYAK, S
KAPOOR, A
SEHGAL, BK
MURALIDHARAN, R
SAHA, D
MALIK, HK
 
Subject Gallium nitride
High electron mobility transistors
Mesa
Inductively coupled plasma etching
Etch rate
Surface roughness
III-V NITRIDES
CHLORINE PLASMA
DRY
ALN
MECHANISMS
SYSTEM
MODEL
INN
 
Description Cl-2/Ar based inductively coupled plasma (ICP) etching of GaN is investigated using photoresist mask in a consequential restricted domain of pressure < 1.2 Pa and radio frequency (RF) sample power < 100 W, for selective mesa etching. The etch characteristics and root-mean-square (rms) surface roughness are studied as a function of process parameters viz. process pressure, Cl-2 percentage in total flow rate ratio, and RF sample power at a constant ICP power, to achieve moderate GaN etch rate with anisotropic profiles and smooth surface morphology. The etch rate and resultant surface roughness of etched surface increased with pressure mainly due to dominant reactant limited etch regime. The etch rate and surface roughness show strong dependence on RF sample power with the former increasing and the later decreasing with the applied RF sample power up to 80 W. The process etch yield variation with applied RF sample power is also reported. The studied etch parameters result in highly anisotropic mesa structures with Ga rich etched surface. (C) 2012 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2014-10-15T11:55:44Z
2014-10-15T11:55:44Z
2012
 
Type Article
 
Identifier THIN SOLID FILMS, 520(24)7212-7218
http://dx.doi.org/10.1016/j.tsf.2012.07.117
http://dspace.library.iitb.ac.in/jspui/handle/100/14841
 
Language en