Record Details

Copper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applications

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Copper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applications
 
Creator RAVAL, HN
SUTAR, DS
RAO, VR
 
Subject Copper(II) phthalocyanine
Ionizing radiation dosimetry
Passivation
Sensitivity
OFET
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
THIN-FILM SILICON
NITRIDE
SENSITIVITY
PRINCIPLES
RADFET
SPACE
XPS
CVD
 
Description Effects of ionizing radiation exposure of gamma-rays on the copper(II) phthalocyanine thin-films are studied using photoelectron spectroscopy techniques and electrostatic force microscopy. Based on the changes observed in the electrical properties of the copper(II) phthalocyanine thin-film, organic electronic devices are demonstrated in this work for ionizing radiation dosimetry applications. Encapsulation of silicon nitride layer deposited by hot-wire CVD technique, for copper(II) phthalocyanine based organic electronic devices, has been discussed for ionizing radiation sensing. A design technique of stacking organic field effect transistors in parallel was verified for improving the current sensitivity of the sensors for ionizing radiation dosimetry. (C) 2013 Elsevier B. V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-10-15T11:58:15Z
2014-10-15T11:58:15Z
2013
 
Type Article
 
Identifier ORGANIC ELECTRONICS, 14(5)1281-1290
http://dx.doi.org/10.1016/j.orgel.2013.02.026
http://dspace.library.iitb.ac.in/jspui/handle/100/14846
 
Language en