Copper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applications
DSpace at IIT Bombay
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Title |
Copper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applications
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Creator |
RAVAL, HN
SUTAR, DS RAO, VR |
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Subject |
Copper(II) phthalocyanine
Ionizing radiation dosimetry Passivation Sensitivity OFET CHEMICAL-VAPOR-DEPOSITION FIELD-EFFECT TRANSISTORS THIN-FILM SILICON NITRIDE SENSITIVITY PRINCIPLES RADFET SPACE XPS CVD |
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Description |
Effects of ionizing radiation exposure of gamma-rays on the copper(II) phthalocyanine thin-films are studied using photoelectron spectroscopy techniques and electrostatic force microscopy. Based on the changes observed in the electrical properties of the copper(II) phthalocyanine thin-film, organic electronic devices are demonstrated in this work for ionizing radiation dosimetry applications. Encapsulation of silicon nitride layer deposited by hot-wire CVD technique, for copper(II) phthalocyanine based organic electronic devices, has been discussed for ionizing radiation sensing. A design technique of stacking organic field effect transistors in parallel was verified for improving the current sensitivity of the sensors for ionizing radiation dosimetry. (C) 2013 Elsevier B. V. All rights reserved.
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Publisher |
ELSEVIER SCIENCE BV
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Date |
2014-10-15T11:58:15Z
2014-10-15T11:58:15Z 2013 |
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Type |
Article
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Identifier |
ORGANIC ELECTRONICS, 14(5)1281-1290
http://dx.doi.org/10.1016/j.orgel.2013.02.026 http://dspace.library.iitb.ac.in/jspui/handle/100/14846 |
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Language |
en
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