Record Details

p-type Phosphorus doped ZnO nanostructures: an electrical, optical, and magnetic properties study

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title p-type Phosphorus doped ZnO nanostructures: an electrical, optical, and magnetic properties study
 
Creator PANIGRAHY, B
BAHADUR, D
 
Subject CHEMICAL-VAPOR-DEPOSITION
THIN-FILMS
NANOWIRES
GROWTH
ARRAYS
DOPANT
 
Description Well-arranged/self-assembled ZnO platelets with durable and reproducible p-type conductivity were synthesized using PCl5 as a dopant source via a simple low cost aqueous based chemical approach. Scanning electron microscopy and selected area diffraction pattern reveal pristine and doped ZnO nanostructures which are single-crystalline and grown predominantly along the [0002] direction. Split UV emission peaks in the photoluminescence spectra are located at 3.324 and 3.2714 eV, which could be attributed to acceptor bound exciton and free electrons to the acceptor emission, respectively. The relative intensity of defect-related broad-band emission (with respect to UV emission) ranging from 480-750 nm is enhanced significantly (I-D/I-UV = 1-0.056) in doped nanostructures, rendering the creation of defects. A systematic evaluation of room temperature ferromagnetism is found in pristine and doped ZnO nanostructures. p-type Doping is confirmed by photoluminescence spectra and the I-V characteristic of phosphorus doped ZnO nanoplatelets.
 
Publisher ROYAL SOC CHEMISTRY
 
Date 2014-10-15T13:31:22Z
2014-10-15T13:31:22Z
2012
 
Type Article
 
Identifier RSC ADVANCES, 2(15)6222-6227
http://dx.doi.org/10.1039/c2ra20441j
http://dspace.library.iitb.ac.in/jspui/handle/100/15010
 
Language en